MIR360-A21-G1
MEMS-Based IR-Sources
New
MEMS-Based IR-Sources
#All products
#Optical component
#Infrared light source
MEMS-Based IR-Sources
MFrontier MEMS infrared light source developed has excellent electrical modulation characteristics, infrared emitter and blackbody radiation characteristics, wide spectrum, low power consumption. hioh response. hioh emissivity and long service life. it can be widely used in medical devices, industrial manufacturing, smart home appliances, automotive electronics and other fields.
Meanwhile, MFrontier can provide a range of standard and customized MEMS infrared light sources to meet the diverse needs of a wide range of users.
MEMS infrared light source chip
Blackbody radiation characteristics
Low power consumption
High emissivity
Long lifetime
Chip size
3.6*3.6*0.3 mm
Effective radiation zone
2.2*2.3 mm
Packaging form
TO39，with a spotlight cup，Si-ARC
Parameters
Radiation rate
>0.85
temperature coefficient
Typ. 3035 ppm/℃
time constant
50 ms
Thermal resistance
22±5Ω
Working voltage
Typ. 3.1V
Light source power consumption
450mW
Effective radiation zone temperature
450℃
Service life
＞ 100,000hr
Through our mature production process chain and comprehensive service system support, MFrontier provides customers with a series of full support from product selection to production and after-sales.
0755-21386871
info@memsf.com
